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Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics

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Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics

Auteurs : RBID : Pascal:12-0300126

Descripteurs français

Pascal (Inist)
- Effet surface, Caractéristique courant tension, Défaut surface, Densité défaut, Propriété transport, Epitaxie jet moléculaire, Densité courant, Onde entretenue, Coefficient corrélation, Puits quantique, Nanomatériau, Semiconducteur III-V, Arséniure d'indium, Arséniure de gallium, Substrat InGaAs, InAlAs, InGaAs, 8115H, 8107.

English descriptors

KwdEn :
- Continuous wave, Correlation coefficient, Current density, Defect density, Gallium arsenides, III-V semiconductors, IV characteristic, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Quantum wells, Surface defect, Surface effect, Transport properties.

Abstract

We investigate the impact of surface defect density on the transport properties of molecular beam epitaxy grown InGaAs/AllnAs Quantum Cascade (QC) structures. We examine six parameters of the current-voltage (IV) characteristics of the QC mesas: turn-on voltage, turn-on current density, turn-on differential resistance, differential resistance, cut-off voltage, and cut-off current density. The analyses for pulsed mode operation (T=80 K and 300 K) and continuous wave (CW) operation (80 K) show that all six parameters are only weakly correlated to surface defects. The turn-on voltage and current density share a negative correlation with defects ( > -0.26) in both pulsed mode and CW operation at 80 K, and a positive correlation in pulsed mode at 300 K ( < 0.21). The cut-off voltage has a positive correlation in all three modes of operation (<0.51). The cut-off current density has a positive correlation ( < 0.39) in both pulsed mode (80 K and 300 K) and a negligible correlation in CW operation (80 K). We observed insignificant correlation coefficients ( < 0.1) for differential resistances at 80 K along with a weak negative correlation ( > -0.29) in pulsed mode at 300 K. Our analysis demonstrates that shallow oval and a few deep oval defects have little influence on IV.

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<author><name sortKey="Aung, Nyan L" uniqKey="Aung N">Nyan L. Aung</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Princeton University</s1>
<s2>Princeton, NJ 08544</s2>
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<country>États-Unis</country>
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<orgName type="university">Université de Princeton</orgName>
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<author><name>XUE HUANG</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Princeton University</s1>
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<author><name sortKey="Charles, Williams O" uniqKey="Charles W">Williams O. Charles</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Princeton University</s1>
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<author><name>NAN YAO</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>The Imaging and Analysis Center, Princeton University</s1>
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<author><name sortKey="Gmachl, Claire F" uniqKey="Gmachl C">Claire F. Gmachl</name>
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<title level="j" type="abbreviated">J. cryst. growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Continuous wave</term>
<term>Correlation coefficient</term>
<term>Current density</term>
<term>Defect density</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>IV characteristic</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Quantum wells</term>
<term>Surface defect</term>
<term>Surface effect</term>
<term>Transport properties</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Effet surface</term>
<term>Caractéristique courant tension</term>
<term>Défaut surface</term>
<term>Densité défaut</term>
<term>Propriété transport</term>
<term>Epitaxie jet moléculaire</term>
<term>Densité courant</term>
<term>Onde entretenue</term>
<term>Coefficient corrélation</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Semiconducteur III-V</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Substrat InGaAs</term>
<term>InAlAs</term>
<term>InGaAs</term>
<term>8115H</term>
<term>8107</term>
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<front><div type="abstract" xml:lang="en">We investigate the impact of surface defect density on the transport properties of molecular beam epitaxy grown InGaAs/AllnAs Quantum Cascade (QC) structures. We examine six parameters of the current-voltage (IV) characteristics of the QC mesas: turn-on voltage, turn-on current density, turn-on differential resistance, differential resistance, cut-off voltage, and cut-off current density. The analyses for pulsed mode operation (T=80 K and 300 K) and continuous wave (CW) operation (80 K) show that all six parameters are only weakly correlated to surface defects. The turn-on voltage and current density share a negative correlation with defects ( > -0.26) in both pulsed mode and CW operation at 80 K, and a positive correlation in pulsed mode at 300 K ( < 0.21). The cut-off voltage has a positive correlation in all three modes of operation (<0.51). The cut-off current density has a positive correlation ( < 0.39) in both pulsed mode (80 K and 300 K) and a negligible correlation in CW operation (80 K). We observed insignificant correlation coefficients ( < 0.1) for differential resistances at 80 K along with a weak negative correlation ( > -0.29) in pulsed mode at 300 K. Our analysis demonstrates that shallow oval and a few deep oval defects have little influence on IV.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics</s1>
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<fA11 i1="01" i2="1"><s1>AUNG (Nyan L.)</s1>
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<fA11 i1="02" i2="1"><s1>XUE HUANG</s1>
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<fA11 i1="03" i2="1"><s1>CHARLES (Williams O.)</s1>
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<fA11 i1="05" i2="1"><s1>GMACHL (Claire F.)</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>The Imaging and Analysis Center, Princeton University</s1>
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<fC01 i1="01" l="ENG"><s0>We investigate the impact of surface defect density on the transport properties of molecular beam epitaxy grown InGaAs/AllnAs Quantum Cascade (QC) structures. We examine six parameters of the current-voltage (IV) characteristics of the QC mesas: turn-on voltage, turn-on current density, turn-on differential resistance, differential resistance, cut-off voltage, and cut-off current density. The analyses for pulsed mode operation (T=80 K and 300 K) and continuous wave (CW) operation (80 K) show that all six parameters are only weakly correlated to surface defects. The turn-on voltage and current density share a negative correlation with defects ( > -0.26) in both pulsed mode and CW operation at 80 K, and a positive correlation in pulsed mode at 300 K ( < 0.21). The cut-off voltage has a positive correlation in all three modes of operation (<0.51). The cut-off current density has a positive correlation ( < 0.39) in both pulsed mode (80 K and 300 K) and a negligible correlation in CW operation (80 K). We observed insignificant correlation coefficients ( < 0.1) for differential resistances at 80 K along with a weak negative correlation ( > -0.29) in pulsed mode at 300 K. Our analysis demonstrates that shallow oval and a few deep oval defects have little influence on IV.</s0>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Defect density</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Densidad defecto</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Propriété transport</s0>
<s5>05</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s2>NK</s2>
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<s4>INC</s4>
<s5>48</s5>
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<fN44 i1="01"><s1>OTO</s1>
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Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics

Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics

Descripteurs français

English descriptors

Abstract

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